论文部分内容阅读
阐述了高分辨二次电子成分衬度像的成像原理、成像条件和实验方法，介绍了一种新的试样制备方法，讨论了各种制样方法的特点。以多层Ｐ＋Ｓｉ１－ｘＧｅｘ／ｐＳｉ异质结内光发射红外探测器为例，介绍了二次电子成分衬度像观察技术在异质结半导体材料和器件微结构研究中的应用。将这种技术与通常的透射电子衍射衬度方法进行了比较，讨论了它在异质结半导体材料和器件中的应用前景。
The imaging principles, imaging conditions and experimental methods of high resolution secondary electron contrast images are described. A new sample preparation method is introduced, and the characteristics of various sample preparation methods are discussed. Taking the multi-layer P + Si1-xGex / pSi heterostructure internal light emitting infrared detector as an example, the application of secondary electron composition contrast imaging technique in the study of heterojunction semiconductor materials and devices microstructure was introduced. This technique is compared with the conventional method of transmission electron diffraction, and its application prospects in heterojunction semiconductor materials and devices are discussed.