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为了在光开关器件的局部区域实现量子阱混合，选用1～2MeV、1×1013～5×1013cm－2的P＋离子注入到InGaAs/InGaAsP分别限制多量子阱（SCH－MQW）激光器结构，在700oC下快速热退火90s。发现光致发光谱的峰值位置发生蓝移9～89nm。蓝移的大小随着注入能量和剂量的增大而增大，并且能量比剂量对蓝移的影响更大。
In order to realize the quantum well mixing in the local area of the optical switch device, the InGaAs / InGaAsP confinement MQW laser structures are respectively implanted with P ions of 1 to 2 MeV and 1 × 10 13 to 5 × 10 13 cm -2, Rapid thermal annealing under 90s. It was found that the peak position of photoluminescence occurred blue shift 9 ~ 89nm. The size of the blue shift increases with the energy and dose of implantation, and the effect of energy on the blue shift is greater than dose.