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用半绝缘多晶硅 ( SIPOS) - Si O2 复合层作为 4H- Si C n+ pp+结构的钝化层 ,克服了用多孔碳化硅或单纯用 Si O2 钝化的不足 .在 LPCVD淀积 SIPOS层后 ,用 90 0℃氧气氛退火代替了平常的热氧化 ,在 SIPOS层上生长了一层 Si O2 .实际测量证实了这种新方法的合理性 .分析了各主要工艺对钝化效果的影响 ,综合优化指出 :在淀积 SIPOS层时 ,掺氧量要高 ,而淀积温度不应太高 .用此方法钝化的 4H- Si C n+ pp+ 结构 ,击穿电压接近理想值 ,反向漏电流明显降低
The SIPOS-Si O2 composite layer is used as passivation layer of 4H-Si C n + pp + structure, which overcomes the shortcomings of passivating with porous silicon carbide or simply with Si O2. After the SIPOS layer is deposited by LPCVD, 90 ℃ oxygen atmosphere annealing instead of the usual thermal oxidation, SIPOS layer in the growth of a layer of Si O2. The actual measurement confirmed the rationality of this new method.Analysis of the impact of the main process on passivation, comprehensive optimization It is pointed out that when the SIPOS layer is deposited, the amount of oxygen doping should be high and the deposition temperature should not be too high. The passivated 4H-Si C n + pp + structure has a breakdown voltage close to the ideal value and a significant reverse leakage current reduce