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采用化学水浴(CBD)法在InCl3.4H2O和CH3CSNH2的酸性混合溶液体系中分别通过改变pH值、溶液nIn:nS浓度比及溶液温度参数依次制备In2S3薄膜,并通过X射线衍射、扫描电镜及紫外/可见/近红外分光光度计等手段系统研究不同工艺下制备In2S3薄膜的晶相结构、表面形貌及光学性能。研究发现:溶液pH值对制备In2S3薄膜有很大的影响,在pH为1.8制备的In2S3薄膜性能较好;溶液nIn:nS浓度比影响薄膜的致密性,在1:4时相对较好;CBD法制备薄膜最佳溶液温度为80℃。在优化工艺参数下制备的In2S3薄膜可见光透过率在90%以上,禁带宽度为2.72eV,能够满足CIGS太阳能电池缓冲层薄膜的要求。
The In2S3 thin films were sequentially prepared by changing the pH value, the nn: nS concentration ratio of the solution and the temperature of the solution in the acidic mixed solution system of InCl3.4H2O and CH3CSNH2 using the chemical bath (CBD) method. The In2S3 thin films were sequentially prepared by X-ray diffraction, scanning electron microscopy and ultraviolet / Vis / NIR spectrophotometer and other means to systematically study the different phases of In2S3 thin film prepared by the crystal structure, surface morphology and optical properties. The results show that the pH value of the solution has great influence on the preparation of In2S3 thin films. The In2S3 thin films prepared at pH 1.8 have good performance. The concentration ratio of nIn: nS solution affects the compactness of the films at 1: 4, The optimal temperature for preparing the film is 80 ℃. The In2S3 thin films prepared under optimized process parameters have a visible light transmittance of over 90% and a forbidden band width of 2.72 eV, which can meet the requirements of the CIGS solar cell buffer layer film.