采用铟束流保护下的调制中断生长技术改善(0001)GaN表面形貌

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使用分子束外延方法,采用In束流保护下的调制中断生长技术,在(0001)蓝宝石衬底上生长GaN薄膜.利用反射式高能电子衍射(RHEED)对生长进行实时监控,并用扫描电子显微镜(SEM)、原子力显微镜(AFM)和X射线衍射(XRD)法对GaN外延薄膜的表面形貌和晶体质量进行分析.实验结果表明:采用该技术生长的Ga极性GaN外延薄膜中的晶体表面残留Ga滴密度大大降低,GaN外延薄膜的表面形貌得到改善,其均方根粗糙度(RMS)由3nm降低为0.6nm,同时XRD双晶摇摆曲线测试的结果表明,GaN外延层的晶格质量也得到改善. Growth of GaN films on (0001) sapphire substrate was achieved by molecular beam epitaxy using modulated interrupting growth technology under In beam protection. The growth was monitored in real time by reflective high energy electron diffraction (RHEED) and analyzed by scanning electron microscopy SEM, atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the surface morphology and the crystal quality of the GaN epitaxial films.The experimental results show that the surface of the GaN in the Ga-polar GaN epitaxial films Ga droplet density is greatly reduced, surface morphology of GaN epitaxial film is improved, and its root mean square roughness (RMS) is reduced from 3nm to 0.6nm. The results of XRD bismuth rocking curve show that the lattice quality of GaN epitaxial layer Also improved.
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