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SemiSouth实验室与Ⅱ—Ⅵ公司正协力为SiC外延晶片提供SiC衬底及外延。该项合作将Ⅱ—Ⅵ的4H—SiC衬底生产能力与SemiSouth公司运用SiC外延反应堆开发出的SiC外延材料生产技术相结合,计划生产直径为2英寸,层结构厚度达20μm并具有宽范围n—与P—型掺杂。Ⅱ—Ⅵ公司总经理Thomas Anderson说:“我们坚信,与SemiSouth公司的进一步合作将使两公司的技术得到迅速发展,并最终使产品成本降低。据他介绍,Ⅱ—Ⅵ在外延材料和器件的生产方面得到SemiSouth公司宝贵的反馈意见。这将帮助他们提高SiC衬底材料的质量.并生产出满足SemiSouth外延工艺具体要求的衬底。
SemiSouth Labs and II-VI are working together to provide SiC substrates and epitaxy for SiC epitaxial wafers. The collaboration combines the production capabilities of II-VI 4H-SiC substrates with SiC epitaxial material development technology developed by SemiSouth using SiC epitaxial reactors to produce 2-inch diameter, 20 μm-thick layer structures and a wide range of n - with P-type doping. Thomas Anderson, Managing Director of Ⅱ-Ⅵ, said: ”We are convinced that further cooperation with SemiSouth will allow the two companies to rapidly develop their technology and ultimately reduce the cost of their products. According to him, Ⅱ-Ⅵ epitaxial materials and devices The production of SemiSouth company received valuable feedback.This will help them to improve the quality of SiC substrate material and to produce the substrate to meet the specific requirements of SemiSouth epitaxial process.