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本文系统研究了Co/CoO双层膜的各向异性磁电阻(AMR)与交换偏置行为,并给出了外加微扰场对交换偏置磁锻炼效应恢复程度影响的实验结果.结果表明磁锻炼效应发生后,施加0.15T的倾斜微扰场可致使铁磁畴分裂进而诱导磁锻炼效应的恢复,揭示磁锻炼效应恢复程度与微扰场的角度有紧密关联.在微扰场作用下FM自旋在两个方向分裂,一部分自旋沿微扰场方向,另一部则被冷却场的AFM自旋钉扎住而沿原来方向不变.当微扰场和冷却场夹角大于30°时,FM畴被分裂,磁锻炼效应开始恢复,表明一个磁畴内的铁磁自旋偏离夹角最大为30°,而磁锻炼效应发生后,部分AFM自旋偏离冷却场方向的角度则小于30°,实验结果与相应的理论计算结果一致.此外,恢复程度随微扰场角度的增加而增加,最大恢复程度时角度为90°.同时,磁锻炼效应的恢复增加了交换偏置值,为器件设计提供理论支持,在自旋电子学基础和应用研究方面具有重要的指导意义.
In this paper, the anisotropic magnetoresistance (AMR) and exchange bias of Co / CoO bilayers are studied systematically and the experimental results of the influence of applied perturbation field on the recovery degree of exchange bias magnetic exercise are given. After the training effect, applying the tilted perturbation field of 0.15 T can cause the ferromagnetic domains to split and thus induce the recovery of the magnetic exercise effect, revealing that the degree of recovery of the magnetic exercise effect is closely related to the angle of the perturbation field. Spin splits in both directions, with some spinning along the direction of the perturbation field and the other being pinned by the AFM spin of the cooling field in the original direction. When the angle between the perturbation field and the cooling field is greater than 30 ° , The FM domains were split and the magnetic exercise effect began to recover, indicating that the maximum included angle of the ferromagnetic spin in a magnetic domain was 30 °. However, the angle of some AFM spin off the cooling field was less than 30 °, the experimental results are consistent with the corresponding theoretical results. In addition, the degree of recovery increases with the increase of the perturbation field angle, and the angle of the maximum recovery degree is 90 °. Meanwhile, the recovery of magnetic exercise effect increases the exchange bias value, Provide theoretical support for device design Spin electronics basic and applied research has an important guiding significance.