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本文用化学腐蚀、阳极腐蚀法、光学显微镜和透射电子显微镜研究了水平生长的掺Te-GaAs单晶的微缺陷和微沉淀物.获得了微缺陷与位错的相对分布关系,发现这些缺陷及其存在形式与样品的载流子浓度有关.这些微缺陷主要是附有沉淀颗粒的非本征层错和非本征Frank环.并且得到了腐蚀显示的小丘和s坑与透射电子显微镜观察到的缺陷群相对应的关系.
In this paper, the micro-defects and micro-precipitates of horizontally grown Te-doped GaAs single crystals were studied by means of chemical etching, anodic etching, optical microscope and transmission electron microscope.The relative distribution of micro-defects and dislocations was obtained, and these defects were found Its existence forms are related to the carrier concentration of the samples.These microdefects are mainly extrinsic layer faults with extrusive particles and extrinsic Frank rings, and the mounds and s-pits that are corroded are observed by transmission electron microscopy Defective group to the corresponding relationship.