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分别采用量子阱模型和量子点模型对蓝色InGaN/GaN多量子阱发光二极管电学和光学特性进行模拟,并和实验测量结果进行了比对,结果发现,量子点模型的引入,很好地解决了I-V和电致发光二方面的实验与理论模型间符合程度不好的问题.同时,在I-V曲线特性模拟中发现,在量子点理论模型的基础上,只有考虑到载流子的非平衡量子传输效应,才能得到和实验相接近的I-V曲线,揭示着在InGaN/GaN多量子阱发光二极管电输运特性中,载流子的非平衡量子传输效应扮演重要角色.
The electrical and optical properties of blue InGaN / GaN MQWs were simulated by using quantum well and quantum dot models respectively. The results were compared with the experimental results. It was found that the introduction of the quantum dot model is a good solution IV and electroluminescence two experimental and theoretical models to meet the poor degree of the problem.At the same time, IV curve characteristics simulation found that based on the quantum dot theoretical model, only consider the carrier non-equilibrium quantum The IV curve, which is close to the experimental one, can be obtained and reveals that the unbalanced quantum effect of charge carriers plays an important role in the electrical transport properties of InGaN / GaN multi-quantum well LEDs.