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介绍了ＬＦ７６５０ＣＭＯＳ运算放大器在６０Ｃｏγ射线、１ＭｅＶ电子和４、７、３０ＭｅＶ不同能量质子辐照环境中的响应规律及６０Ｃｏγ射线和１ＭｅＶ电子辐照损伤在室温和１００℃高温条件下的退火特性，探讨了引起ＣＭＯＳ运放在不同辐射环境中辐照响应出现差异的损伤机理，并对ＣＭＯＳ运放电路在不同辐射环境中表现出的与ＣＭＯＳ数字电路不同的响应特征给予了解释。
The response of LF7650 CMOS operational amplifier to 60 Co γ-ray, 1 MeV electron and 4,7,30 MeV proton irradiation and the annealing characteristics of 60Co γ -ray and 1 MeV electron irradiation damage at room temperature and 100 ℃ were discussed. Which causes the damage mechanism of CMOS optoelectronic devices in different radiation environments and explains the different response characteristics of CMOS optoelectronic circuits to CMOS digital circuits in different radiation environments.