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采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响.利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)等分析手段对所制得薄膜的结构、形貌、成分等进行了表征,XRD结果表明在基板温度为665℃时能够制得结晶性能较好的多晶薄膜,XPS分析确定掺杂后的Sb以Sb5+离子形式存在.讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响,结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势.最后探讨了Sb掺杂SnO2薄膜的显色特性,认为Sb5+离子的本征吸收是薄膜显色的主要原因.
Sb-doped SnO2 thin films (ATO) were prepared by chemical vapor deposition (CVD), and the effects of Sb doping on the structure and properties of ATO thin films were investigated. XRD, SEM, The structure, morphology and composition of the prepared films were characterized by XPS and XPS. The XRD results showed that the polycrystalline films with good crystallinity could be obtained at the substrate temperature of 665 ℃. XPS analysis It is confirmed that the doped Sb exists in the form of Sb5 + ions.The effect of Sb doping on the properties of thin films such as sheet resistance, transmittance and reflectivity is discussed. The results show that the minimum sheet resistance is obtained when Sb doping amount is 2% 7.8Ω / □, the transmittance and the reflectivity of the thin film in the visible region decrease with the increase of the Sb doping amount.Finally, the color development of the Sb-doped SnO2 thin film is discussed, and the intrinsic absorption of the Sb5 + The main reason for color.