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Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction.At low temperature,Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration,and there is almost no precipitation in reaction solution.In addition,the low temperature is desired in assembly line.The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V,respectively.These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.
Cadmium sulfide (CdS) buffer layers with the scale of 10 cm × 10 cm are deposited by chemical bath deposition (CBD) with different temperatures and thiourea concentrations under low ammonia conditions. These are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction. At low temperature, Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration, and there is almost no precipitation in reaction solution. In addition, the low temperature is desired in the assembly line. The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V, respectively. These films are suitable for the buffer layers of large-scale Cu (In, Ga) Se2 (CIGS) solar cells.