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文章研究了SOI衬底上SiGe npn异质结晶体管集电结耗尽电荷和电容.根据器件实际工作情况,基于课题组前面的工作,对耗尽电荷和电容模型进行扩展和优化.研究结果表明,耗尽电荷模型具有更好的光滑性;耗尽电容模型为纵向耗尽与横向耗尽电容的串联,考虑了不同电流流动面积,与常规器件相比,SOI器件全耗尽工作模式下表现出更小的集电结耗尽电容,因此更大的正向Early电压;在纵向工作模式到横向工作模式转变的电压偏置点,耗尽电荷和电容的变化趋势发生改变.SOI薄膜上纵向SiGe HBT集电结耗尽电荷和电容模型的建立和扩展为毫米波SOI BiCMOS工艺中双极器件核心参数如Early电压、特征频率等的设计提供了有价值的参考.
In this paper, the depletion charge and capacitance of collector junctions of SiGe npn heterojunction transistors on SOI substrates are investigated. Based on the actual operation of the devices, the depleted charge and capacitance models are extended and optimized based on the previous work of the research group. , Depletion charge model has a better smoothness; depletion capacitance model for the longitudinal depletion and horizontal depletion capacitance of the series, taking into account the different current flow area, compared with conventional devices, SOI devices fully depleted mode of operation performance A smaller collector junction depletion capacitance and thus a greater positive Early voltage and a change trend in the depletion charge and capacitance at the voltage bias point in the vertical to horizontal operation mode changes.The vertical orientation in the SOI film The establishment and expansion of SiGe HBT collector junction depletion charge and capacitance models provide valuable references for the design of bipolar device core parameters such as Early voltage and eigenfrequency in the millimeter-wave SOI BiCMOS process.