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在采用α-naphtylphenyliphenyl diamine (NPB)和tris-8-hydroxyquinoline aluminum(Alq3)材料的双层有机电致发光器件(OLED)中,在阳极与有机层间插入纳米级厚度的氧化铝作为缓冲层来提高器件的效率。研究了氧化铝的厚度对器件性能的影响,并提出一种模型解释该现象。实验发现,当氧化铝的厚度为0.3nm时,器件的亮度提高30%,同时在相同电压下,提高了器件电流、量子效率与能量效率,同时降低了器件的阈值电压。相信由于简单与高效,该工艺会对OLED技术有很好的影响。
In a two-layered organic electroluminescent device (OLED) employing α-naphtylphenyliphenyl diamine (NPB) and tris-8-hydroxyquinoline aluminum (Alq3) materials, nanosized alumina is interposed as a buffer layer between the anode and the organic layer Improve the efficiency of the device. The effect of the thickness of alumina on the device performance was investigated and a model was proposed to explain the phenomenon. The experimental results show that when the thickness of aluminum oxide is 0.3nm, the brightness of the device is increased by 30%, meanwhile, the device current, quantum efficiency and energy efficiency are increased under the same voltage, meanwhile the threshold voltage of the device is reduced. It is believed that this process will have a very good effect on the OLED technology due to its simplicity and high efficiency.