论文部分内容阅读
用溶胶－凝胶技术制备了组成在准同型相界点［ｍ（Ｚｒ）／ｍ（Ｔｉ）＝５２／４８］附近的钙钛矿相ＰＺＴ薄膜，并运用原子力显微分析与椭偏法测试相结合的方法跟踪了薄膜的烧结过程．结果表明：钙钛矿相ＰＺＴ［ｍ（Ｚｒ）／ｍ（Ｔｉ）＝５２／４８］薄膜晶化发生于约５５０℃，并伴随着薄膜表面的粗糙化；镀铂硅基片表面粗糙度对ＰＺＴ薄膜的晶化有很大影响．根据ＡＦＭ，ＸＲＤ测试结果，分析了不同热处理条件对ＰＺＴ薄膜微结构及漏电流特性的影响，提出合适的热处理条件．分析了ＰＺＴ薄膜钙钛矿相形成温度高于相应粉体的原因
The perovskite phase PZT thin films with the composition of near the same type phase boundary [m (Zr) / m (Ti) = 52/48] were prepared by the sol-gel technique and analyzed by atomic force microscopy and ellipsometry A combination of methods to track the film sintering process. The results show that the perovskite phase PZT [m (Zr) / m (Ti) = 52/48] film occurs at about 550 ℃ and is accompanied by the roughening of the surface of the film. PZT film crystallization has a great impact. According to the results of AFM and XRD, the influence of different heat treatment conditions on the microstructure and leakage current of PZT thin film was analyzed, and the suitable heat treatment conditions were proposed. The reason why the formation temperature of PZT thin film perovskite phase is higher than that of the corresponding powder is analyzed