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采用Crosslight APSYS这一行业专业软件对p-GaN,InGaN/InGaN多量子阱,n-GaN和蓝宝石的芯片结构研究了不同电极形状与器件的光电性能之间的关系.优化设计了普通指形电极、对称型指形电极、h形指形电极、旋转形电极、中心环绕形电极、树形电极等6种电极结构.通过电极优化设计,电流分布更加均匀,减小了电流的聚集效应.优化后的电极结构结果表明:芯片的电特性得到了提高,芯片的光特性得到了明显改善,芯片的出光效率大幅度提高,芯片的转化效率得到了提升.
The relationship between different electrode shapes and the optoelectronic properties of the devices was investigated by using cross-light APSYS, an industry-specific software for the p-GaN, InGaN / InGaN multiple quantum wells, n-GaN and sapphire chip structures. , Symmetrical finger electrodes, h-shaped finger electrodes, rotating electrodes, center-surrounding electrodes, tree-shaped electrodes and other six kinds of electrode structures.Under electrode optimization design, the current distribution more uniform, reducing the current aggregation effect. The results of the electrode structure show that the electrical properties of the chip are improved, the light property of the chip is significantly improved, the light extraction efficiency of the chip is greatly improved, and the conversion efficiency of the chip is improved.