饱和量子点半导体光放大器高通滤波特性

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量子点半导体光放大器(QDSOA)具有更小的载流子恢复时间和更高的放大带宽,是光信息处理的理想器件。利用QDSOA三能级电子跃迁速率方程和光场传输方程,建立了有源区分段模型,对饱和QDSOA的频率响应特性进行研究,得到输入光功率、注入电流、有源区长度、最大模式增益和载流子跃迁时间等参数与3dB截止频率和抑制比之间的关系。结果表明,饱和QDSOA具有高通滤波特性,有较宽的高频信号放大带宽和较高的3dB截止频率,通过优化参数,可以获得比传统体材料和量子阱材料半导体光放大器更加优异的特性,为QDSOA的设计与应用提供了理论指导。 Quantum dot semiconductor optical amplifier (QDSOA) with smaller carrier recovery time and higher amplification bandwidth, ideal for optical information processing devices. Based on the QDSOA three-level electronic transition rate equation and optical field propagation equation, an active region segment model is established to study the frequency response characteristics of saturated QDSOA. The input optical power, injection current, active region length, maximum mode gain, The relationship between the parameters such as the transition time of the flow and the 3dB cut-off frequency and rejection ratio. The results show that the saturated QDSOA has high-pass filtering characteristics, wide bandwidth of high-frequency signal amplification and high 3dB cut-off frequency. By optimizing the parameters, it can obtain more excellent characteristics than traditional bulk materials and quantum well semiconductor optical amplifiers. The design and application of QDSOA provide theoretical guidance.
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