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VOx films fabricated by direct currect (DC) magnetron sputtering using a high pure vanadium metal target (99.99%) are reported. The impact of the temperature coefficient of resistance (TCR), the effects of Ar/O2 ratio on the deposition, the sputtering power, the gas pressure, and the annealing temperature and time are analyzed through the design of an orthogonal experiment. The result shows that VOx films prepared by this method have a relatively high TCR. The the annealing temperature and time of the VOx films are studied using the RTP-500. The relationships between TCR and annealing temperature and time are obtained. It illustrates that rapid annealing results in an optimized TCR in the range from –2%/K to –3.6%/K.