半导体探测器具有良好的能量分辨率,在能谱分析中已引起人们广泛的兴趣。Si材料原子序数(Z=14)较小,探测能量大于30keV的射线时,其效率迅速下降,因此人们选用Ge(Li)探测器。但它在制造和使用中存在两个主要的问题,一是必需用Li离子补偿Ge材料,二是Li在Ge中固有的不稳定性,使器件严禁升高到室温,即使是偶然的一次,也会导致器件的补偿度毁坏。这两个缺点,在用高纯Ge材料制备的探测器(HPGe探测器)中是不存在的, Semiconductor detectors have good energy resolution and have attracted a great deal of interest in energy spectrum analysis. Ge (Li) detector has been chosen because of the rapid decrease of the Si material atomic number (Z = 14) and its detection efficiency of more than 30 keV. However, there are two main problems in manufacture and use. One is that it is necessary to compensate the Ge material with Li ions, and the other is the inherent instability of Li in Ge to prevent the device from rising to room temperature even if by accident. Will also lead to the destruction of the device compensation. These two drawbacks do not exist in detectors fabricated with high purity Ge materials (HPGe detectors)