SiO2 films were thermally grown on < 111 > oriented p-type mono-crystalline silicon to about 500 nm in thickness by wet oxidation at high temperature. These SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with high-energy Ar, Kr, Xe or U ions. The C-ion implantation was performed on a 200 kV heavy ion implanter and the irradiations with Ar, Kr, Xe ions were performed on the HIRFL (IMP, Lanzhou). U ion irradiations were performed on the UNILAC (GSI, Darmstadt). SiO2 films were thermally grown on <111> oriented p-type mono-crystalline silicon to about 500 nm in thickness by wet oxidation at high temperature. These SiO2 films were initially implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with high-energy Ar, Kr, Xe or U ions. The C-ion implantation was performed on a 200 kV heavy ion implanter and the irradiations with Ar, Kr, Xe ions were performed on the HIRFL (IMP, Lanzhou) . U ion irradiations were performed on the UNILAC (GSI, Darmstadt).