氧化铅摄象管靶是一种有结光电导靶。为了保证靶的暗电流、灵敏度、分辨力等性能,这种靶应具有P-I-N结构。在靠近透明电极一面应为很薄的N型区;靶的主要部分应为电阻率较高的本征层(Ⅰ层);而在邻近自由表面处则应该是很薄的P层。为了充分发挥有结光电导靶的性能,有必要直接观察判断P-I-N结。但是由于氧化铅靶实际上是一个微晶组成的疏松层,所以观察单晶半导体结的通常方法在这里已不适用。多年来未见有报道这方面的观察结果,其原因或许就是直接观察不容易。近年来,我们试用扫描电子显 Lead oxide tube target is a light-induced conductance target. In order to ensure the dark current target, sensitivity, resolution and other properties, this target should have P-I-N structure. It should be a very thin N-type region near the transparent electrode. The main part of the target should be an intrinsic layer of higher resistivity (layer I) and a thin layer of P adjacent to the free surface. In order to give full play to the performance of the light-induced conductance target, it is necessary to directly observe and judge the P-I-N junction. However, since the lead oxide target is actually a bulk layer of microcrystals, the usual method for observing single crystal semiconductor junctions is not applicable here. There have been no reports of observations in this area for many years, perhaps because direct observation is not easy. In recent years, we try scanning electronic display