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研究了掺氮直拉硅单晶 (NCZ)中氮在高温退火过程中对氧沉淀的影响 .通过不同温度高温退火后 ,测量氧沉淀的生成量和观察硅片体内微缺陷 (BMD)密度与高温形核时间的变化关系 ,同时用透射电子显微镜 (TEM)观察氧沉淀及相关缺陷的微观结构 .实验结果表明高温退火后氮对硅中氧沉淀形核有明显的促进作用 ,在相同退火条件下NCZ硅中BMD密度要远远高于相应的普通直拉硅 .这是由于氮在高温下与氧反应形成氮氧复合体 (N V O)促进了氧沉淀的形核 ,而且TEM的结果表明氧沉淀的形态都是平板状 ,周围存在应力场 .
The effect of nitrogen on the oxygen precipitation during high temperature annealing in nitrogen-doped Czochralski silicon single crystal (NCZ) was investigated. The formation of oxygen precipitates and the density of microdefects (BMDs) in silicon wafers were observed after annealing at different temperatures At the same time, the microstructure of oxygen precipitation and related defects were observed by transmission electron microscopy (TEM) .The experimental results show that nitrogen can obviously promote the oxygen precipitation nucleation in silicon after high temperature annealing, and under the same annealing conditions The density of BMD in NCZ silicon is much higher than that of the corresponding ordinary Czochralski silicon, which is due to the formation of nitrogen oxide complex (NVO) by the reaction of nitrogen with oxygen at high temperature, which promotes the nucleation of oxygen precipitation and the TEM results show that oxygen Precipitated forms are flat, there is a stress field around.