美国加州大学戴维斯分校的科学家最近展示了一种具有三维结构的纳米线晶体管,并借助该技术成功将硅与非硅材料集成到了一个集成电路中。研究人员称,该技术有望帮助硅材料突破瓶颈,为更快、更稳定的电子和光子设备的制造铺平道路。硅是目前最常见的一种电子材料,但它并不是万能的。建立在传统蚀刻工艺基础的硅集成电路在尺寸上已经小到了极限,这限制了系统运行速度和集成度的提升。此外,传统硅电路的一些“先天不足”也使其无法 Scientists at the University of California, Davis, recently demonstrated a three-dimensional structure of nanowire transistors that enables the successful integration of silicon and non-silicon materials into an integrated circuit. The researchers said the technology is expected to help silicon materials break the bottleneck and pave the way for faster and more stable manufacturing of electronic and photonic devices. Silicon is by far the most common type of electronic material, but it is not everything. Silicon integrated circuits built on the foundations of traditional etching processes have been minimal in size, limiting the system’s speed and integration. In addition, some of the “inherent deficiencies” of traditional silicon circuits make it impossible