The crystal structure of InSb[111]A/B surfaces shows that this structure is polarized.This means that the surfaces of InSb[111]A and InSb[111]B contain two different crystallized directions and they have different physical and chemical properties.Experiments were carried out on the InSb[111]A/B surfaces,showing that tartaric acid etchant could create a very smooth surface on the InSb[111]B without any traces of oxides and etch pit but simultaneously create etch pit on InSb[111]A surfaces.After lapping and polishing,some particles remained on the InSb[111]B surface,they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate,the growth layer was not uniform and some island-like regions were observed.The purpose of this work is to remove these particles on the InSb[111]B surface.Some morphology images of both surfaces,InSb[111]A/B,will be presented. The crystal structure of InSb [111] A / B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [111] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb [111] A / B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb [111] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb [111 ] A surfaces. After lapping and polishing, some particles remained on the InSb [111] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the InSb [111] B surface. Home morphology images of both surfaces, InSb [111] A / B, will be presented.