采用飞秒时间分辨圆偏振光抽运-探测光谱对In0·1Ga0·9N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为0·2,此结果支持在圆偏振光激发下,重、轻空穴带的跃迁强度比为3∶1,而不支持1∶1或1∶0·94的观点·同时获得自旋偏振弛豫时间为490±70ps,定性分析了自旋弛豫机理,认为BAP机理是电子自旋弛豫的主要机理. The electron spin injection and relaxation of In0.1Ga0.9N thin films were investigated by using femtosecond time-resolved circularly polarized pump-probe spectroscopy. The initial spin polarization was about 0.2. This result was supported by the circularly polarized Under light excitation, the transition intensity ratio of heavy and light holes is 3:1, but not 1: 1 or 1: 0.94. Meanwhile, the spin polarization relaxation time is 490 ± 70ps, and qualitative analysis Spin relaxation mechanism, that BAP mechanism is the main mechanism of electron spin relaxation.