具有光学、电学器件和注入式激光器的单片集成一直是制造光电集成电路的一个有吸引力的目标。对于集成激光器。关键因素之一是:不采用解理工艺形成共振反射镜而获得低阈值电流激光器。在注入式激光器中,化学蚀刻、等离子蚀刻,离子蚀刻技术取代了解理过程用于形成共振镜面。本文报告了使用分子束外延(MBE)生长和反应离子蚀刻(RIBE)技术得到低阈值电流 GaAs/AlGaAs 多量子阱(MQW)激光器。这种激光器用一次 MBE 生长形成横波导结 Monolithic integration with optics, electrical devices, and injection lasers has long been an attractive goal for optoelectronic integrated circuits. For integrated lasers. One of the key factors is that a low threshold current laser can be obtained without using a cleavage process to form a resonant mirror. In the injection laser, chemical etching, plasma etching, ion etching technology replaces the cleavage process for the formation of resonant mirrors. This paper reports the use of molecular beam epitaxy (MBE) growth and reactive ion etching (RIBE) to obtain low threshold current GaAs / AlGaAs multiple quantum well (MQW) lasers. This laser grows with a single MBE to form a transverse waveguide junction