Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide

来源 :中国光学快报:英文版 | 被引量 : 0次 | 上传用户：abkkk123

【摘要】

：

The impulse response for a phase-change material Ge2Sb2Te5(GST)-based photodetector integrated with a silicon-on-insulator(SOI)waveguide is simulated using fini

【作者】

：

Vibhu Srivastava Prateek Mishr

【机构】

：

IndianInstituteofInformationTechnology-Allahabad

【出处】

：

中国光学快报:英文版

【发表日期】

：

2019年10期

【关键词】

：

WAVEGUIDE SOI tuning

【基金项目】

：

supported by the Science and Engineering Research Board(SERB),Department of Science and Technology,Government of India under the Early Career Research(ECR)award scheme with project file No.ECR/2016/00

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The impulse response for a phase-change material Ge2Sb2Te5(GST)-based photodetector integrated with a silicon-on-insulator(SOI)waveguide is simulated using finite difference time domain method.The current is calculated by solving the drift-diffusion model

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Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide

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