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基于低压技术,利用亚阈值区MOS管代替寄生BJT管,设计了一种工作在低电源电压下的基准电压源,并对基准电压进行了温度补偿。采用TSMC 0.18μm CMOS工艺对电路进行了设计和仿真。仿真结果显示:电路正常工作的最低电源电压为0.6V,当电源在0.6~2.0V范围内变化,基准输出电压仅变化了1.75mV;在0.6V电源电压下,-20℃~125℃温度范围内,温度系数为2.8×10~(-5)/℃,电源抑制比为52.47dB@10kHz,整个电路的功耗仅为12μW。
Based on the low-voltage technology, a sub-threshold MOS transistor is used instead of the parasitic BJT transistor. A reference voltage source operating at a low power supply voltage is designed and the reference voltage is temperature-compensated. The circuit is designed and simulated using TSMC 0.18μm CMOS process. The simulation results show that the minimum supply voltage for normal operation of the circuit is 0.6V, and the reference output voltage only changes by 1.75mV when the power supply is in the range of 0.6-2.0V. Under the 0.6V supply voltage, the temperature range of -20 ° C to 125 ° C , The temperature coefficient is 2.8 × 10 -5 / ℃, the power supply rejection ratio is 52.47dB@10kHz, the power consumption of the whole circuit is only 12μW.