论文部分内容阅读
随着器件特征尺寸的减小,单粒子效应成为影响CMOS工艺空间辐射环境可靠性的关键因素之一。未来航天和国防系统需要了解新型工艺中的单粒子效应损伤机制及其加固方法,包括在器件几何尺寸和材料方面的改变如何影响到能量淀积、电荷收集、电路翻转、参数退化等等。分析了随着特征尺寸减小,在高速数字电路中的单粒子瞬态效应SET的影响,包括由质子的直接电离作用产生的单粒子效应、粒子能量效应和非直接电离对单粒子效应的影响。对可能替代体硅器件的新型器件单粒子能力进行了简要介绍。
With the reduction of device feature size, single-particle effect becomes one of the key factors that affect the reliability of radiation environment in CMOS process space. Future aerospace and defense systems need to understand the single-particle damage mechanisms and their reinforcement methods in new processes, including how changes in device geometries and materials affect energy deposition, charge collection, circuit reversal, parameter degradation, and more. The effect of single event transient SET in high speed digital circuits, including single event effects due to direct ionization of protons, the energy effects of particles and the effect of indirect ionization on single event effects, is analyzed as the feature size decreases . A brief overview of new device single-particle capabilities that may replace bulk silicon devices is presented.