论文部分内容阅读
本文研究了低温条件下Zn向GaAs中的扩散。实验是用ZnAs_2源在抽真空的石英管中进行的。研究了结深X_j,扩散温度T和扩散时间t的关系。结果表明,表面层电阻R_s随X_j,的增加而降低;表面浓度C_s随1/T的增加而降低;迁移率μ随C_s的增加而降低。将C_s对1/(R_s·X_j)作图表明,C_s随1/(R_s·X_j)的增加而增加。这一关系可作为判断多层GaAlAs/GaAs外延层扩Zn后表面浓度的简便方法。文中讨论了Zn在GaAs和InP中的扩散机理,比较了Zn在InP和GaAs扩散层中的参数。 该扩散工艺可获得表面光亮、无损伤的高浓度表面层,并已在GaAs/Ga_(1-x)Al_xAs双异质结发光管的制备工艺中应用。制得了光输出功率为2—4mW、串联电阻为3—5Ω、压降为2.4V的GaAs/Ga(1-x)Al_xAs双异质结发光管。
This paper studies the diffusion of Zn into GaAs at low temperature. The experiment was performed with a ZnAs 2 source in a vacuumized quartz tube. The relationship between junction depth X_j, diffusion temperature T and diffusion time t was studied. The results show that the surface resistance R_s decreases with the increase of X_j, the surface concentration C_s decreases with the increase of 1 / T, and the mobility μ decreases with the increase of C_s. Mapping C_s to 1 / (R_s.X_j) shows that C_s increases as 1 / (R_s.X_j) increases. This relationship can be used as a simple method to judge the surface concentration of multi-layer GaAlAs / GaAs epitaxial layers after Zn diffusion. In this paper, the diffusion mechanism of Zn in GaAs and InP is discussed, and the parameters of Zn in InP and GaAs diffusion layers are compared. The diffusion process can obtain a bright and non-destructive high-concentration surface layer and has been used in the preparation process of a GaAs / Ga_ (1-x) Al_xAs double heterojunction LED. A GaAs / Ga (1-x) Al_xAs double heterostructure LED with light output of 2-4mW, series resistance of 3-5Ω and voltage drop of 2.4V was fabricated.