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对硅片进行了不同条件及方式的清洗预处理,使硅片表面获得不同程度的亲水性,利用硅片表面的接触角等研究比较了不同清洗方式对硅片亲水性的影响,并采用红外透视仪及拉伸测试法对键合质量测试比较。试验结果表明RCA1的清洗处理对硅片表面亲水性提高程度较大,等离子体处理能够大幅提高硅片亲水性但要严格控制处理时长,试验结果为实现低温退火条件下的硅-硅直接键合提供了依据。
The silicon wafer was pretreated by different conditions and methods to obtain different degrees of hydrophilicity on the surface of the silicon wafer. The influence of different cleaning methods on the hydrophilicity of the silicon wafer was also studied by using the contact angle of the silicon wafer. Using infrared fluoroscopy and tensile testing of bonding quality test comparison. The experimental results show that the RCA1 cleaning process to improve the hydrophilicity of the surface of the wafer larger plasma treatment can significantly improve the hydrophilicity of the silicon but to strictly control the processing time, the test results for the realization of low-temperature silicon-silicon annealing conditions Bonding provided the basis.