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根据白光照明和可变换波长的光通信中对单芯片双波长发光二极管(LED)要求,在分析了反向偏置隧道结性质的基础上,设计了用反向偏置隧道结连接两个有源区的单芯片双波长LED,用金属有机化学气相沉积技术(MOCVD)在GaAs衬底上一次外延生长了同时发射两种波长的LED,其包含一个AlGaInP量子阱有源区和一个GaInP量子阱有源区,两个有源区由隧道结连接;通过后工艺制备了双波长LED器件,在20mA电流注入下,可以同时发射626nm和639nm两种波长,光强是127mcd,正向电压是4.17V。与传统的单有源区LED进行对比表明,双波长LED有较强的光强;对比单有源区LED的2.08V正向电压,考虑到双波长LED包含隧道结和两个有源区,隧道结上的压降很小。
According to the requirements of single-chip dual-wavelength light-emitting diode (LED) in white light illumination and switchable wavelength optical communication, based on the analysis of the properties of the reverse-biased tunnel junction, a reverse-biased tunnel junction Source single-chip dual-wavelength LED, a two-wavelength LED is simultaneously epitaxially grown on a GaAs substrate by metal organic chemical vapor deposition (MOCVD) and comprises an AlGaInP quantum well active region and a GaInP quantum well Active region and two active regions are connected by a tunnel junction. The dual-wavelength LED device is prepared by a post process, and emits two wavelengths of 626 nm and 639 nm at a current of 20 mA with a light intensity of 127 mcd and a forward voltage of 4.17 V. Compared with the traditional single-source LED, the dual-wavelength LED has strong light intensity. Compared with the 2.08V forward voltage of the single-source LED, considering that the dual-wavelength LED includes the tunnel junction and two active regions, The pressure drop across the tunnel junction is small.