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讨论了具有1微米栅的改进的硅(金属半导体场效应晶体管)MESFET,其最高振荡频率已达15千兆赫。以前 MESFET 的改善由降低栅金属化电阻的影响和减小栅压点的寄生来达到。现在,在7千兆赫下,最大可用增益 MAG 为5分贝,并且在6千兆赫下最佳噪声系数 F_0是5分贝。在约小于6千兆赫下器件有条件地不稳定。在3千兆赫下单向增益 U 为20分贝。研究表明,不是所有的寄生效应都已消除。如果源栅之间沟道的串联电阻可以减小,f_(max)将接近由本征晶体管所估计的数值35千兆赫。
An improved silicon (Metal Semiconductor Field Effect Transistor) MESFET with a 1 micron gate is discussed, with a maximum oscillation frequency of up to 15 GHz. Previous improvements to MESFETs have been achieved by reducing the effects of gate metallization resistance and reducing the parasitic gate voltage. Now, at 7 GHz, the maximum available gain MAG is 5 dB, and the optimum noise figure F_0 is 5 dB at 6 GHz. The device is conditionally unstable at about less than 6 gigahertz. The unidirectional gain U at 3 GHz is 20 dB. Research shows that not all parasitic effects have been eliminated. If the series resistance of the channel between the source and gate can be reduced, f max will approach 35 gigahertz estimated by the intrinsic transistor.