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研究了以三甲基镓 (TMGa)和氨 (NH3 )为气源物质 ,以氢气 (H2 )为载气进行GaN半导体的金属有机物气相外延 (MOVPE)生长时 ,NH3 分解率对于GaN半导体外延生长的成分空间的影响。热力学计算结果表明 :随着NH3分解率的提高 ,用于生长GaN外延层的气 +固两相区逐渐向高Ⅴ /Ⅲ比方向变小 ,解释了实际生长过程中Ⅴ /Ⅲ比要求很高的原因。预计高的Ⅴ /Ⅲ比及低的NH3 分解率有助于GaN的MOVPE外延生长。
The effects of decomposition rate of NH3 on epitaxial growth of GaN semiconductor were studied in the case of growth of metal organic vapor phase epitaxy (MOVPE) of GaN semiconductor using trimethyl gallium (TMGa) and ammonia (NH3) as the gas source and hydrogen (H2) as the carrier gas. The impact of the composition of space. The results of thermodynamic calculations show that with the increase of decomposition rate of NH3, the gas-solid two-phase region used for growing GaN epitaxial layer gradually becomes smaller toward higher V / III ratio, which explains that the requirement of V / III ratio is very high during the actual growth s reason. It is expected that a high Ⅴ / Ⅲ ratio and a low decomposition rate of NH3 contribute to the epitaxial growth of GaN by MOVPE.