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优化有源区的量子结构和改善热管理,是提高外腔面发射激光器输出功率的关键。以上两项措施都基于对激光器准确的热分析,依赖于热导率这一关键的材料参数。鉴于外腔面发射激光器中多量子阱和分布布拉格反射镜均为典型的纳米结构,考虑纳米尺度传热特性,用三种不同的解析方法,分别计算了不同厚度Ga As/Al As分布布拉格反射镜的热导率,并与已有实验报道对比,优选出更适合于计算Ga As/Al As材料系纳米结构热导率的一种方法。采用优选出的方法,对980 nm外腔面发射激光器中In Ga As/Ga As多量子阱和Ga As/Al As分布布拉格反射镜的热导率进行计算,发现分布布拉格反射镜的法向热导率只有块体材料数值的约40%,多量子阱的法向热导率则略小于块体材料数值的一半。把所得热导率数据用于增益芯片中温度上升的数值分析,结果与实验相符。
Optimizing the quantum structure of the active region and improving thermal management are the keys to increasing the output power of an external cavity surface emitting laser. Both of these measures are based on an accurate thermal analysis of the laser and rely on the critical material parameters of thermal conductivity. In view of the fact that multiple quantum wells and distributed Bragg mirrors are typical nanostructures in an exogeneous surface emitting laser, considering the nanoscale heat transfer characteristics, three different analytical methods are used to calculate the GaAs / AlAs distributed Bragg reflections of different thicknesses The thermal conductivity of the GaAs / AlAs nanostructures is better than that reported in previous experiments. The thermal conductivity of In Ga As / Ga As multiple quantum wells and Ga As / Al As distributed Bragg reflecting mirrors in a 980 nm external-cavity surface-emitting laser was calculated using the preferred method. It was found that the normal heat of the distributed Bragg reflecting mirrors The conductivity is only about 40% of the bulk material value, and the multiple quantum well has a normal thermal conductivity slightly less than half the bulk material value. The resulting thermal conductivity data for temperature rise in the gain chip numerical analysis, the results consistent with the experiment.