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本文主要叙述利用碲溶剂法生长的Hg_(0.805)Cd_(0.195)Te晶体材料制备成8～14微米的光电导探测器样品。通过适当的表面处理并逐渐减薄厚度,得到探测器的探测度D_λ~＊和器件厚度d的依赖关系。其实验结果与理论计算是比较吻合的。在我们的实验里,探测器的探测度对应的最佳厚度在15微米至24微米之间,不同样品的最佳厚度所对应的探测度是不一样的。通过这一试验,我们获得了高性能的光电导探测器样品,D_λ~＊=3～5×10~(10)厘米·赫~(1/2)瓦~(-1),响应率(?)_ λ>10~3伏·瓦~(-1)。
This paper mainly describes the preparation of photoconductive detector samples of 8-14 μm using Hg 0.805 Cd 0.195 Te crystal materials grown by the tellurium solvent method. Through the appropriate surface treatment and the gradual thinning of the thickness, we get the detector dependence D_λ ~ * and device thickness d. The experimental results and theoretical calculations are more consistent. In our experiments, the optimum thickness of the detector is between 15 micrometers and 24 micrometers. The best thickness of different samples corresponds to different probabilities. Through this experiment, we obtained high performance photoconductive detector samples with D_λ ~ * = 3 ~ 5 × 10 ~ (10) cm ~ (1/2) W ~ (-1) ) _ λ> 10 ~ 3V · W -1.