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首先从实验现象出发,阐述了纳米级高密度、高深宽比电子抗蚀剂图形结构发生倒塌与粘连的主要几何因素及其关系。除了结构的几何因素外,结合“Beam Sway”模型分析了抗蚀剂微细结构在制作过程中的受力情况。在上述工作的基础上,提出了克服纳米级高密度、高深宽比电子抗蚀剂图形结构倒塌与粘连的相应措施。其中,通过实验验证了超临界CO2干燥技术对于电子束抗蚀剂ZEP520A用于制作周期200nm及150nm、深宽比超过4的光栅图形结构具有良好的效果。
First, starting from the experimental phenomena, the main geometric factors and their relations of collapsing and blocking of the graphitic structure of nanoscale high density and high aspect ratio electronic resist are described. In addition to the geometric factors of the structure, the forces acting on the fine structure of the resist in the fabrication process are analyzed in combination with the “Beam Sway” model. On the basis of the above work, the corresponding measures to overcome the collapse and adhesion of the nano-level high-density, high aspect ratio electronic resist pattern structure are proposed. Among them, the experimental verification of the supercritical CO2 drying technology for the electron beam resist ZEP520A for the production cycle 200nm and 150nm, the aspect ratio of more than 4 grating pattern has good results.