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全新60 W GaN HEMT Psat晶体管帮助降低军用和民用雷达系统,对于高功率放大器尺寸、重量以及散热的要求。科锐公司宣布推出可适用于军用和商用S波段雷达中的高效GaN HEMT晶体管。新型S波段GaN HEMT晶体管的额定功率为60 W,频率为3.1至3.5GHz之间,与传统Si或GaAs MESFET器件相比,能够提供优越的漏极效率(接近70%)。同时,高效率和高功率密度的结合有助于最大限度地降低散热的要求,并减少在商用雷达系统应用中的尺寸与重量。
The new 60 W GaN HEMT Psat transistor helps to reduce the size, weight, and heat dissipation requirements of high-power amplifiers for military and civil radar systems. Cree announced the availability of high-efficiency GaN HEMT transistors for use in military and commercial S-band radars. The new S-band GaN HEMT transistors, rated at 60 W and operating at frequencies between 3.1 and 3.5 GHz, offer superior drain efficiency (close to 70%) over conventional Si or GaAs MESFET devices. At the same time, the combination of high efficiency and high power density helps minimize thermal requirements and reduces size and weight in commercial radar system applications.