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在等离子体增强化学气相沉积系统中利用大氢稀释逐层淀积技术制备nc-Si量子点阵列,用硅烷和氨气混合气体淀积氮化硅层,制备了a-SiNx/nc-Si/a-SiNx不对称双势垒结构,其中隧穿和控制a-SiNx层的厚度分别为3和20nm.利用电导-电压和电容-电压测量研究结构中的载流子隧穿和存储特性.在同一样品中观测到由于电荷隧穿引起的电导峰和由于电荷存储引起的电容回滞现象.研究结果表明,合理地选择隧穿层和控制栅层的厚度,就能够实现载流子发生共振隧穿进入到nc-Si量子点中,并被保存在nc-Si量子点中.
The nc-Si quantum dot array was prepared by plasma-enhanced chemical vapor deposition (HDT) using layer-by-layer deposition technique. A-SiNx / nc-Si / a-SiNx asymmetric double-barrier structure in which tunneling and controlling the thickness of the a-SiNx layer are 3 and 20 nm respectively. Carrier-tunneling and storage characteristics in the structure were investigated using conductance-voltage and capacitance-voltage measurements. In the same sample, the conductance peak due to charge tunneling and capacitance hysteresis due to charge storage were observed.The results show that the carrier tunneling resonant tunneling can be realized by properly choosing the thickness of the tunneling layer and the control gate layer Penetrate into the nc-Si quantum dots and are stored in nc-Si quantum dots.