,Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

来源 :中国物理快报（英文版） | 被引量 : 0次 | 上传用户：zmdwfh2008

【摘要】

：

We have studied the interfacial reactions between amorphous LaAlO3 thin films and Si substrates, using highresolution transmission electron microscopy and x-ray

【作者】

：

XIANG Wen-Feng LU Hui-Bin YAN Lei HE Meng ZHOU Yue-Liang CHEN Zheng-Hao

【机构】

：

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of S

【出处】

：

中国物理快报（英文版）

【发表日期】

：

2006年2期

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We have studied the interfacial reactions between amorphous LaAlO3 thin films and Si substrates, using highresolution transmission electron microscopy and x-ray photoelectron spectroscopy.

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,Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

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