目前,对铟锑—自身阳极氧化系统已作了较好的研究。但是,对于在InSb基底上具有习惯上供硅工艺用的介质(SiO_2,Si_3N_4,SiON)的MIS结构的性能的研究却作得很少。可是,后者在半导体—介质界面处的许多参数超过了InSb自身氧化结 At present, indium antimony - their own anodizing system has made a good study. However, little research has been done on the performance of MIS structures that have conventionally used for the silicon process (SiO 2, Si 3 N 4, SiON) on InSb substrates. However, many of the latter’s parameters at the semiconductor-dielectric interface exceed InSb’s own oxide