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为了得到在低能条件下更为精确的Ar~+和Xe~+轰击SiO_2的溅射模型,对已有化合物溅射模型进行调研分析,总结了3种溅射模型,分别为Pencil模型、Bach模型和Seah模型,并对其不足之处加以分析。在Seah模型基础上,对溅射阈值采用新的计算方法,并利用等效原子法改进溅射参数和表面键能的计算方法,形成改进后的新模型。结合已有的关于Ar~+和Xe~+法向轰击SiO_2的实验数据,对4种模型的计算结果进行对比分析。对于Ar~+和Xe~+法向轰击SiO_2,改进后的溅射模型的均方根误差最小,拟合优度最高,均优于其他3种模型。说明在低能状态下,采用改进后的模型可以更为精确地计算Ar~+和Xe~+轰击SiO_2的溅射率。
In order to get a more accurate sputtering model of Ar ~ + and Xe ~ + bombardment SiO_2 under low energy conditions, the sputtering models of the existing compounds were investigated and analyzed, and three kinds of sputtering models were summarized, namely Pencil model, Bach model And Seah model, and analyze its shortcomings. Based on the Seah model, a new calculation method is adopted for the sputtering threshold, and the equivalent atom method is used to improve the calculation of the sputtering parameters and surface bond energy to form a new improved model. Combining with the existing experimental data on the bombardment of SiO_2 by Ar + and Xe +, the results of four models are compared and analyzed. For Ar ~ + and Xe ~ + bombardment of SiO_2, the improved model has the lowest root-mean-square error and the highest goodness of fit, which are all better than the other three models. It shows that the sputtering rate of Ar_2 + and Xe + + bombardment of Ar ~ + and Xe ~ + can be more accurately calculated in the low energy state by using the improved model.