【摘 要】
：
With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fab
【机 构】
：
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semi
【出 处】
：
Chinese Physics B
论文部分内容阅读
With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.
With an chirped InAs / GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emit at wavelength around 970 nm are fabricated. From using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from The narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centered at 972 nm with a full width at half maximum of 18 nm are obtained.
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