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A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Through the use of a well and a single floating guard ring to suppress edge breakdown,the device can easily be fabricated by one step epitaxial growth and one step diffusion.The dark current of a 30 μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90％ of the breakdown voltage.The responsivity at 1.55 μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300nm.