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对微晶硅薄膜晶体管,尤其对底栅型晶体管,在衬底和晶化层间存在一层非晶相起始层,这将严重影响器件性能.文中采用降低硅烷浓度的方法简便有效地减薄了用超高频化学气相法直接沉积的微晶硅薄膜起始层的厚度,得到起始层厚度小于20nm的微晶硅薄膜.在硅烷浓度为2%的条件下采用四版工艺制备了具有Al/SiNx/μcSi/n+-μc-Si/Al结构的底栅微晶硅TFT,其开关比(Ion/Ioff)达到106,场效应迁移率为0.7cm2/(V·s),阈值电压为5V左右.
For microcrystalline silicon thin-film transistors, especially for bottom-gate transistors, there is an initial layer of amorphous phase between the substrate and the crystallized layer, which will seriously affect the device performance.In this paper, the method of reducing the concentration of silane is simply and effectively reduced The thickness of the initial layer of the microcrystalline silicon thin film directly deposited by the ultra-high frequency chemical vapor deposition method was thinned to obtain the microcrystalline silicon thin film with the initial layer thickness less than 20 nm. The four-layer process was used to prepare the microcrystalline silicon thin film with a silane concentration of 2% The bottom gate microcrystalline silicon TFT with Al / SiNx / μcSi / n + -μc-Si / Al structure has a switching ratio (Ion / Ioff) of 106 and a field-effect mobility of 0.7cm2 / (V · s) About 5V.