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提出了一种可快速关断的新型横向绝缘栅双极晶体管(LIGBT)。在LIGBT关断时,利用一个集成的PMOS晶体管来短路发射结,以获得短的关断时间。PMOS晶体管由LIGBT驱动,不需要外部驱动电路。新器件在没有带来任何副作用(如snap-back现象和工艺制造上的困难)的情况下,获得了低的导通压降和快的关断速度。数值仿真结果表明,新器件在不增加导通压降的同时,将关断时间从120ns降到12ns。
A new type of lateral insulated gate bipolar transistor (LIGBT) with fast turn-off is proposed. When the LIGBT is off, an integrated PMOS transistor is used to short-circuit the emitter junction for a short turn-off time. The PMOS transistor is driven by LIGBT and does not require an external driver circuit. The new device achieves low turn-on voltage drop and fast turn-off speed without any side effects such as snap-back and process manufacturing difficulties. The numerical simulation results show that the new device reduces the turn-off time from 120 ns to 12 ns without increasing the on-state voltage drop.