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薄膜晶体管(TFT)作为开关元件广泛应用于平板显示领域,沟道层材料的选择直接影响了TFT的性能。近年来,基于非晶氧化物半导体(AOS)沟道层材料的TFT已成为具有潜力替代传统硅材料(非晶硅或多晶硅)沟道层TFT的新一代技术,有望应用于超大屏显示、3D显示、柔性显示以及透明显示等新一代显示领域。综述了AOS TFT沟道层的研究进展,重点介绍了AOS TFT用AOS沟道层在材料体系、成膜技术、薄膜的后续处理工艺、材料体系中各元素含量以及掺杂等方面的研究成果,并分析了AOS沟道层对AOS TFT性能的影响以及存在的问题,对AOS TFT的未来发展趋势进行了预测和展望。
Thin-film transistors (TFTs) are widely used in the field of flat panel display as switching elements. The choice of channel layer material directly affects the performance of TFTs. In recent years, TFTs based on amorphous oxide semiconductor (AOS) channel layer materials have become a new generation of technologies that have the potential to replace the channel layer TFTs of conventional silicon materials (amorphous or polycrystalline silicon) and are expected to be applied to large screen displays, 3D Display, flexible display and transparent display of a new generation of display areas. The research progress of channel layer of AOS TFT is reviewed. The research results of AOS channel layer with AOS TFT in the aspects of material system, film forming technology, subsequent processing of thin film, content of each element in the material system and doping are introduced. And analyzes the influence of AOS channel layer on the performance of AOS TFT and the existing problems, and forecasts and prospects the future development trend of AOS TFT.