Rare-earth elements(Re) Sc and Y doped Mg_2Si thermoelectric materials were made via a field-activated and pressure-assisted synthesis(FAPAS) method at 1023-1073 K,50 MPa for 15 min.The samples created using this method have uniform and compact structures.The average grain size was about 1.5-2μm,the micro-content of Re did not change the matrix morphology.The sample with 2500 ppm Sc obtained the best Seebeck coefficient absolute value,about 1.93 times of that belonging to non-doped Mg_2Si at about 408 K.The electric conductivity of the sample doped with 2000 ppm Y becomes 1.69 times of that of pure Mg_2Si at 468 K,while the former had a better comprehensive electrical performance.Their thermal conductivity was reduced to 70%and 84% of that of non-doped Mg_2Si.Thus,the figure of merit and ZT of these two samples were enhanced visibly,which were 3.3 and 2.4 times of the non-doped samples at 408 K and 468 K,respectively.The maximal ZT belonging to samples doped with 2500 ppm Sc went up to 0.42 at about 498 K,higher than 0.40 of sample doped with 2000 ppm Y at 528 K and 0.25 of non-doped Mg_2Si at 678 K,and the samples doped with Sc seemed to get the best thermoelectric performances at lower temperature. Rare-earth elements (Re) Sc and Y doped Mg_2Si thermoelectric materials were made via a field-activated and pressure-assisted synthesis (FAPAS) method at 1023-1073 K, 50 MPa for 15 min. These samples created using this method have uniform and compact structures. The average grain size was about 1.5-2 μm, the micro-content of Re did not change the matrix morphology. sample with 2500 ppm Sc obtained the best Seebeck coefficient absolute value, about 1.93 times of that belonging to non- doped Mg 2 Si at about 408 K. The electric conductivity of the sample doped with 2000 ppm Y becomes 1.69 times of that of pure Mg 2 Si at 468 K, while the former had a better overall electrical performance. Their thermal conductivity was reduced to 70% and 84 % of that of non-doped Mg_2Si.Thus, the figure of merit and ZT of these two samples were enhanced visibly, which were 3.3 and 2.4 times of the non-doped samples at 408 K and 468 K, respectively. The maximal ZT to samples doped with 2500 ppm Sc went up t o 0.42 at about 498 K, higher than 0.40 of sample doped with 2000 ppm Y at 528 K and 0.25 of non-doped Mg_2Si at 678 K, and the samples doped with Scaled to get the best thermoelectric performances at lower temperature.