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低成本场效应管(FET)能提供击穿电压保护,同时共式抑制比(CMRR)及其它参数可以改善达100倍,且无需严格配对的双极晶体管或更费的器材。
Low-cost FETs provide breakdown voltage protection while improving the CMRR and other parameters up to 100x without the need for tightly paired bipolar transistors or more expensive devices.