论文部分内容阅读
从器件构成材料中α-SiN:H,VO2,Al薄膜介电常数弥散特性的Lorentz多谐振模型出发,研究了器件在金属表面等离子体与VO2,特别是α-SiN:H薄膜光学声子共同作用下的红外吸收特性;得到了在不同的光谱范围器件的红外吸收特性随着α-SiN:H钝化层几何厚度的变化关系,与中心工作波长10μm对应的且经过位相修正以后钝化层的几何厚度为λ/4n时的红外吸收光谱、以及VO2的相变对吸收光谱的影响.
Based on the Lorentz multi-resonant model of the dielectric constant dispersion of α-SiN: H, VO2, Al thin films in the device materials, the photonic phonon interaction between metal surface plasmas and VO2, especially α-SiN: H thin films The infrared absorption characteristics of the devices with different spectral ranges were obtained. The results showed that the infrared absorption characteristics of the devices varied with the geometric thickness of α-SiN: H passivation layer. The passivation layer corresponding to the central operating wavelength of 10 μm and phase- The infrared absorption spectrum at a geometric thickness of λ / 4n, and the influence of VO2 phase transition on the absorption spectrum.